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UM6K1N
Transistors
2.5V Drive Nch+Nch MOS FET
UM6K1N
Structure
Silicon N-channel MOS FET
External dimensions (Unit : mm)
UMT6
2.0
1.3
0.9
Features
0.65
0.65
0.7
1) Two 2SK3018 transistors in a single UMT package.
(6)
(5)
(4)
2) The MOS FET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
1pin mark
(1)
(2)
0.2
(3)
0.15
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for
portable equipment.
Applications
Interfacing, switching (30V, 100mA)
Each lead has same dimensions
Abbreviated symbol : K1
Packaging specifications
Inner circuit
(6)
(5)
Gate
Protection
(4)
?
Package
Taping
Diode
Type
Code
Basic ordering unit (pieces)
TN
3000
Tr1
?
UM6K1N
Tr2
Gate
(1)
Protection
(2)
(3)
Diode
(1)
(2)
(3)
Tr1
Tr1
Tr2
Source
Gate
Drain
? A protection diode has been built
in between the gate and the source
to protect against static electricity
Absolute maximum ratings (Ta=25 ° C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
30
± 20
Unit
V
V
(4)
(5)
(6)
Tr2
Tr2
Tr1
Source
Gate
Drain
when the product is in use.
Use the protection circuit when
rated voltages are exceeded.
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
I D
I DP ? 1
P D ? 2
Tch
Tstg
± 100
± 400
150
150
? 55 to + 150
mA
mA
mW
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 With each pin mounted on the recommended lands.
Thermal resistance
Parameter
Symbol
Limits
Unit
Channel to ambient
Rth(ch-a)
?
833
1042
° C / W / TOTAL
° C / W / ELEMENT
? With each pin mounted on the recommended lands.
Rev.B
1/3
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